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| FDW258P January 2002 FDW258P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V - 8V). Features * -9 A, -12 V. RDS(ON) = 11 m @ VGS = -4.5 V RDS(ON) = 14 m @ VGS = -2.5 V RDS(ON) = 20 m @ VGS = -1.8 V Applications * Load switch * Motor drive * DC/DC conversion * Power management * Rds ratings for use with 1.8 V logic * Low gate charge * High performance trench technology for extremely low RDS(ON) * Low profile TSSOP-8 package D S S D G S S D Pin 1 5 6 7 8 4 3 2 1 TSSOP-8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation TA=25oC unless otherwise noted Parameter Ratings -12 8 (Note 1) Units V V A W C -9 -50 1.3 0.6 -55 to +150 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 87 114 C/W Package Marking and Ordering Information Device Marking 258P Device FDW258P Reel Size 13'' Tape width 12mm Quantity 3000 units 2002 Fairchild Semiconductor Corporation FDW258P Rev D (W) FDW258P Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on) TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = -250 A Min -12 Typ Max Units V Off Characteristics ID = -250 A, Referenced to 25C VDS = -10 V, VGS = 8 V, VGS = -8 V. VGS = 0 V VDS = 0 V VDS = 0 V ID = -250 A -0.4 -0.6 3 8.6 10.6 13.8 11.2 -50 50 5049 1943 1226 17 23 201 148 VDS = -6 V, VGS = -4.5 V ID = -9 A, 61 8 16 -1.25 (Note 2) -3 -1 100 -100 -1.5 mV/C A nA nA V mV/C 11 14 20 14 m On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance VDS = VGS, ID = -250 A, Referenced to 25C VGS = -4.5 V, ID = -9 A VGS = -2.5 V, ID = -8 A VGS = -1.8 V, ID = -6.5 A VGS =-4.5 V, ID = -9A, TJ=125 VGS = -4.5 V, VDS = -5 V, VDS = -5 V ID = -9 A ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) A S pF pF pF 31 37 322 237 73 ns ns ns ns nC nC nC A V Dynamic Characteristics VDS = -5 V, f = 1.0 MHz V GS = 0 V, Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -6 V, VGS = -4.5 V, ID = -1 A, RGEN = 6 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.25 A -0.6 -1.2 Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 87C/W when mounted on a 1in2 pad of 2 oz copper. b) 114C/W when mounted on a minimum pad of 2 oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDW258P Rev. D (W) FDW258P Typical Characteristics 80 VGS = -4.5V -3.5V -2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 -2.0V 2 -ID, DRAIN CURRENT (A) 60 -1.8V 40 VGS = - 1.8V 1.8 1.6 1.4 -2.0V -2.5V 20 1.2 1 0.8 0 20 -3.0V -3.5V -4.5V 0 0 0.5 1 1.5 2 2.5 3 -VDS, DRAIN TO SOURCE VOLTAGE (V) 40 -ID, DRAIN CURRENT (A) 60 80 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.025 RDS(ON), ON-RESISTANCE (OHM) 1.3 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -9A VGS = - 4.5V 1.2 ID = -4.5A 0.021 1.1 0.017 TA = 125oC 0.013 1 TA = 25oC 0.009 0.9 0.8 -50 -25 0 25 50 75 100 o 0.005 125 150 1 2 3 4 5 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 80 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 VDS = -5V -ID, DRAIN CURRENT (A) 60 -IS, REVERSE DRAIN CURRENT (A) TA = -55oC 125oC 25oC VGS = 0V 1 TA = 125oC 0.1 25oC 40 0.01 20 0.001 -55oC 0 0.5 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDW258P Rev. D (W) FDW258P Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) 7000 ID = -9A VDS = -4V -6V CAPACITANCE (pF) 6000 5000 4000 3000 2000 CRSS 1000 COSS f = 1 MHz VGS = 0 V 4 CISS -8V 3 2 1 0 0 10 20 30 40 50 60 Qg, GATE CHARGE (nC) 0 0 3 6 9 12 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 10 100ms 1s 10s DC 100s 1ms 10ms Figure 8. Capacitance Characteristics. 50 SINGLE PULSE RJA = 114C/W TA = 25C P(pk), PEAK TRANSIENT POWER (W) 40 30 1 VGS = -4.5V SINGLE PULSE RJA = 114oC/W TA = 25oC 20 0.1 10 0.01 0.01 0.1 1 10 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) + RJA RJA = 114 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 o 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDW258P Rev. D (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R) VCXTM STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4 |
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